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Polar2 TM HiPerFET TM
Power MOSFET
IXFB120N50P2
V DSS
I D25
R DS(on)
= 500V
= 120A
≤ 43 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
PLUS264 TM
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
500
V
G
V DGR
V GSS
V GSM
I D25
I DM
I A
E AS
dv/dt
P D
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
500
± 30
± 40
120
300
120
4
20
1890
V
V
V
A
A
A
J
V/ns
W
D
S
G = Gate
S = Source
Features
Tab
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
Fast Intrinsic Diode
Dynamic dv/dt Rating
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
T L
1.6mm (0.062 in.) from Case for 10s
300
°C
T SOLD
F C
Weight
Plastic Body for 10s
Mounting Force
260
30..120/6.7..27
10
°C
N/lb.
g
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Power Supplies
DC-DC Converters
Battery Chargers
BV DSS
V GS(th)
I GSS
V GS = 0V, I D = 3mA
V DS = V GS , I D = 8mA
V GS = ± 30V, V DS = 0V
500
3.0
5.0
± 200
V
V
nA
Uninterrupted Power Supplies
AC and DC Motor Drives
High Speed Power Switching
Application
I DSS
V DS = V DSS , V GS = 0V
T J = 125 ° C
25 μ A
2.5 mA
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
43 m Ω
? 2011 IXYS CORPORATION, All Rights Reserved
DS100247B(9/11)
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